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SemiLEDs’ Metal Vertical Photon Light Emitting Diode (MvpLED™)
devices fabricated using SemiLEDs’ proprietary and
patent pending process technologies, are the
next generation High Power LEDs for advanced
applications, including solid state lighting. MvpLED
chips use advanced metal alloy process (patent pending),
thus have excellent thermal and electrical conductivity,
allowing the MvpLED chips to operate under extreme
conditions that are not suitable for conventional InGaN
LEDs on sapphire or SiC. SemiLEDs’ MvpLED devices are
fabricated with thinned n-GaN up structure (patent
pending) to enhance light output efficiency and maximize
the vertical injection of current into the device active
layers. With the vertical structure and ultra-thin GaN,
MvpLED devices exhibit a nearly perfect Lambertian light
emission pattern. MvpLED’s metal alloy processes (patent
pending) are also the best solutions for both high
performance and excellent reliability. This MvpLED chip
is designed to have maximized effective emitting area to
meeting light pattern of high power chip requirement.
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